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IXFR40N50Q2_08 PDF预览

IXFR40N50Q2_08

更新时间: 2024-11-05 11:14:07
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描述
HiPerFET Power MOSFET Q2-Class

IXFR40N50Q2_08 数据手册

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HiPerFETTM  
Power MOSFET  
Q2-Class  
IXFR40N50Q2  
VDSS = 500V  
ID25 = 29A  
RDS(on) 170mΩ  
250ns  
trr  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
ISOPLUS247 (IXFR)  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
500  
500  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
ID25  
IDM  
TC = 25°C  
29  
A
A
TC = 25°C, pulse width limited by TJM  
160  
IA  
TC = 25°C  
TC = 25°C  
40  
A
J
G = Gate  
D = Drain  
EAS  
2.5  
S = Source  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
Features  
320  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• Double metal process for low gate  
resistance  
• International standard package  
• EpoxymeetUL94V-0, flammability  
classification  
• Low Rds(on), low Qg  
• Avalanche energy and current rated  
• Fast intrinsic recfifier  
TJM  
Tstg  
-55 ... +150  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
V~  
TSOLD  
VISOL  
FC  
50/60 Hz, RMS, 1 minute  
Mounting force  
2500  
Applications  
20..120/4.5..27  
5
N/lb.  
• DC-DC converters  
Weight  
g
• Switched-mode and resonant-mode  
power supplies, >500kHz switching  
• DC choppers  
• Pulse generation  
• Laser drivers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
VGS = ± 30V, VDS = 0V  
500  
3.0  
V
V
Advantages  
5.5  
• Easy to mount  
• Space savings  
• High power density  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
2 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 20A, Note 1  
170 mΩ  
DS99075C(05/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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