Datasheet > IXFR40N50Q2_08

IXFR40N50Q2_08

更新时间： 2024-09-28 11:14:07

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	116K
描述
HiPerFET Power MOSFET Q2-Class

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中文翻译

获取价格

数据手册

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IXFR40N50Q2_08 数据手册

HiPerFET^TM

Power MOSFET

Q2-Class

IXFR40N50Q2

V_DSS= 500V

I_D25= 29A

R_DS(on)≤ 170mΩ

≤ 250ns

t_rr

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q_g

Low intrinsic R_g, low t_rr

ISOPLUS247 (IXFR)

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

500

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

Isolated Tab

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

160

I_A

T_C= 25°C

G = Gate

D = Drain

E_AS

2.5

S = Source

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

Features

320

T_J

-55 ... +150

150

°C

• Double metal process for low gate

resistance

• International standard package

• EpoxymeetUL94V-0, flammability

classification

• Low Rds(on), low Qg

• Avalanche energy and current rated

• Fast intrinsic recfifier

T_JM

T_stg

-55 ... +150

T_L

Maximum lead temperature for soldering

Plastic body for 10s

300

260

°C

T_SOLD

V_ISOL

F_C

50/60 Hz, RMS, 1 minute

Mounting force

2500

Applications

20..120/4.5..27

N/lb.

• DC-DC converters

Weight

• Switched-mode and resonant-mode

power supplies, >500kHz switching

• DC choppers

• Pulse generation

• Laser drivers

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ. Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 4mA

V_GS= ± 30V, V_DS= 0V

500

3.0

Advantages

5.5

• Easy to mount

• Space savings

• High power density

± 200 nA

I_DSS

V_DS= V_DSS

V_GS= 0V

50 μA

2 mA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 20A, Note 1

170 mΩ

DS99075C(05/08)

12 3 4 5

中文翻译

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