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IXFR44N50Q_03 PDF预览

IXFR44N50Q_03

更新时间: 2024-11-05 11:14:07
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 536K
描述
HiPerFET Power MOSFETs ISOPLUS247, Q-Class

IXFR44N50Q_03 数据手册

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HiPerFETTM  
VDSS ID25  
RDS(on)  
Power MOSFETs  
IXFR 44N50Q 500 V 34 A 120 mΩ  
ISOPLUS247TM, Q-Class  
IXFR 48N50Q 500 V 40 A 110 mΩ  
trr 250 ns  
(Electrically Isolated Backside)  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, High dv/dt  
ISOPLUS247TM  
Symbol  
TestConditions  
Maximum Ratings  
E153432  
VDSS  
VDGR  
T
= 25°C to 150°C  
500  
500  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
Isolated backside*  
ID25  
IDM  
IAR  
TC = 25°C  
44N50Q  
48N50Q  
44N50Q  
48N50Q  
44N50Q  
48N50Q  
34  
40  
A
A
A
A
A
A
TC = 25°C, Note 1  
TC = 25°C  
176  
192  
44  
G = Gate  
S = Source  
D = Drain  
48  
EAR  
EAS  
T
= 25°C  
60  
2.5  
mJ  
J
TCC = 25°C  
* Patent pending  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
15  
V/ns  
Features  
z Silicon chip on Direct-Copper-Bond  
substrate  
PD  
TC = 25°C  
310  
W
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z Low drain to tab capacitance(<30pF)  
z IXYS advanced low Qg process  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
2500  
5
°C  
V~  
g
z Rugged polysilicon gate cell structure  
z Rated for Unclamped Inductive Load  
Switching (UIS)  
VISOL  
Weight  
50/60 Hz, RMS  
t = 1 min  
z Fast intrinsic diode  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
power supplies  
z
z
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250µA  
VDS = VGS, ID = 4mA  
VGS = 20 V, VDS = 0  
500  
2.0  
V
4.0 V  
z
DC choppers  
z AC motor control  
100 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
100 µA  
Advantages  
z
TJ = 125°C  
2 mA  
Easy assembly  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = IT  
Notes 2, 3  
44N50Q  
48N50Q  
120 mΩ  
110 mΩ  
z
High power density  
© 2003 IXYS All rights reserved  
DS98702D(08/03)  

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