HiPerFETTM
VDSS ID25
RDS(on)
Power MOSFETs
IXFR 44N50Q 500 V 34 A 120 mΩ
ISOPLUS247TM, Q-Class
IXFR 48N50Q 500 V 40 A 110 mΩ
trr ≤ 250 ns
(Electrically Isolated Backside)
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, High dv/dt
ISOPLUS247TM
Symbol
TestConditions
Maximum Ratings
E153432
VDSS
VDGR
T
= 25°C to 150°C
500
500
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
20
30
V
V
Isolated backside*
ID25
IDM
IAR
TC = 25°C
44N50Q
48N50Q
44N50Q
48N50Q
44N50Q
48N50Q
34
40
A
A
A
A
A
A
TC = 25°C, Note 1
TC = 25°C
176
192
44
G = Gate
S = Source
D = Drain
48
EAR
EAS
T
= 25°C
60
2.5
mJ
J
TCC = 25°C
* Patent pending
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
15
V/ns
Features
z Silicon chip on Direct-Copper-Bond
substrate
PD
TC = 25°C
310
W
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z Low drain to tab capacitance(<30pF)
z IXYS advanced low Qg process
TL
1.6 mm (0.063 in.) from case for 10 s
300
2500
5
°C
V~
g
z Rugged polysilicon gate cell structure
z Rated for Unclamped Inductive Load
Switching (UIS)
VISOL
Weight
50/60 Hz, RMS
t = 1 min
z Fast intrinsic diode
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
z
z
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250µA
VDS = VGS, ID = 4mA
VGS = 20 V, VDS = 0
500
2.0
V
4.0 V
z
DC choppers
z AC motor control
100 nA
IDSS
VDS = VDSS
VGS = 0 V
100 µA
Advantages
z
TJ = 125°C
2 mA
Easy assembly
Space savings
z
RDS(on)
VGS = 10 V, ID = IT
Notes 2, 3
44N50Q
48N50Q
120 mΩ
110 mΩ
z
High power density
© 2003 IXYS All rights reserved
DS98702D(08/03)