Datasheet > IXFR44N50Q_03

IXFR44N50Q_03

更新时间： 2024-01-04 18:25:45

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	536K
描述
HiPerFET Power MOSFETs ISOPLUS247, Q-Class

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中文翻译

获取价格

数据手册

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IXFR44N50Q_03 数据手册

HiPerFET^TM

V_DSSI_D25

R_DS(on)

Power MOSFETs

IXFR 44N50Q 500 V 34 A 120 mΩ

ISOPLUS247^TM, Q-Class

IXFR 48N50Q 500 V 40 A 110 mΩ

t_rr≤ 250 ns

(Electrically Isolated Backside)

N-ChannelEnhancementMode

Avalanche Rated, Low Q_g, High dv/dt

ISOPLUS247^TM

Symbol

TestConditions

Maximum Ratings

E153432

V_DSS

V_DGR

= 25°C to 150°C

500

T^J_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

V_GSM

Continuous

Transient

Isolated backside*

I_D25

I_DM

I_AR

T_C= 25°C

44N50Q

48N50Q

44N50Q

48N50Q

44N50Q

48N50Q

T_C= 25°C, Note 1

T_C= 25°C

176

192

G = Gate

S = Source

D = Drain

E_AR

E_AS

= 25°C

2.5

T^C_C= 25°C

* Patent pending

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

Features

^zSilicon chip on Direct-Copper-Bond

substrate

P_D

T_C= 25°C

310

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

^zLow drain to tab capacitance(<30pF)

^zIXYS advanced low Q_gprocess

T_L

1.6 mm (0.063 in.) from case for 10 s

300

2500

°C

^zRugged polysilicon gate cell structure

^zRated for Unclamped Inductive Load

Switching (UIS)

V_ISOL

Weight

50/60 Hz, RMS

t = 1 min

^zFast intrinsic diode

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250µA

V_DS= V_GS, I_D= 4mA

V_GS= 20 V, V_DS= 0

500

2.0

4.0 V

DC choppers

^zAC motor control

100 nA

I_DSS

V_DS= V_DSS

V_GS= 0 V

100 µA

Advantages

T_J= 125°C

2 mA

Easy assembly

Space savings

R_DS(on)

V_GS= 10 V, I_D= I_T

Notes 2, 3

44N50Q

48N50Q

120 mΩ

110 mΩ

High power density

DS98702D(08/03)

12 3 4

中文翻译

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