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IXFR44N50F PDF预览

IXFR44N50F

更新时间: 2024-11-18 21:18:39
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
2页 79K
描述
Power Field-Effect Transistor, 38A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN

IXFR44N50F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:ISOPLUS247, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.69其他特性:AVALANCHE RATED, UL RECOGNIZED
雪崩能效等级(Eas):2500 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (ID):38 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):184 A认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFR44N50F 数据手册

 浏览型号IXFR44N50F的Datasheet PDF文件第2页 
Advance Technical Information  
HiPerRFTMPowerMOSFETs  
IXFR 44N50F VDSS  
= 500 V  
= 38 A  
= 120 mΩ  
ISOPLUS247TM  
ID25  
RDS(on)  
F-Class: MegaHertz Switching  
t 250 ns  
rr  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low t  
rr  
ISOPLUS247TM  
E153432  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
T
= 25°C to 150°C  
= 25°C to 150°C; R = 1 MΩ  
500  
500  
V
V
J
J
GS  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
Isolated backside*  
ID25  
IDM  
IAR  
T
= 25°C  
= 25°C, Note 1  
= 25°C  
38  
184  
44  
A
A
A
C
T
C
G = Gate  
S = Source  
D = Drain  
T
C
EAR  
EAS  
T
= 25°C  
60  
2.5  
mJ  
J
C
* Patent pending  
dv/dt  
I
I , di/dt 100 A/µs, V V  
10  
V/ns  
S
DM  
DD  
DSS  
T
150°C, R = 2 Ω  
J
G
Features  
RF capable Mosfets  
l
PD  
T
= 25°C  
390  
W
C
l
l
l
l
Double metal process for low gate  
resistance  
UnclampedInductiveSwitching(UIS)  
rated  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
2500  
5
°C  
V~  
g
Low package inductance  
- easy to drive and to protect  
Fast intrinsicrectifier  
VISOL  
Weight  
50/60 Hz, RMS  
t = 1 min  
Applications  
l
DC-DC converters  
l
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
l
DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
l
13.5MHzindustrialapplications  
J
l
min. typ. max.  
Pulsegeneration  
l
Laserdrivers  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
500  
3.0  
V
5.0 V  
l
RFamplifiers  
VDS = VGS, ID = 4 mA  
Advantages  
l
Easy assembly  
V
= ±20 V, V = 0  
±100 nA  
GS  
DS  
IDSS  
V
= V  
= 0 V  
T = 25°C  
100 µA  
2 mA  
l
DS  
DSS  
J
Space savings  
V
T
= 125°C  
GS  
J
l
High power density  
RDS(on)  
V
Notes 2, 3  
= 10 V, I = I  
T
120 mΩ  
GS  
D
98826(05/01)  
© 2001 IXYS All rights reserved  

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