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IXFR38N80Q2 PDF预览

IXFR38N80Q2

更新时间: 2024-11-19 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 脉冲晶体管
页数 文件大小 规格书
5页 183K
描述
功能与特色: 应用: 优点:

IXFR38N80Q2 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.76其他特性:UL RECOGNIZED
雪崩能效等级(Eas):4000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):28 A最大漏极电流 (ID):28 A
最大漏源导通电阻:0.24 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):500 W
最大脉冲漏极电流 (IDM):150 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IXFR38N80Q2 数据手册

 浏览型号IXFR38N80Q2的Datasheet PDF文件第2页浏览型号IXFR38N80Q2的Datasheet PDF文件第3页浏览型号IXFR38N80Q2的Datasheet PDF文件第4页浏览型号IXFR38N80Q2的Datasheet PDF文件第5页 
HiPerFETTM  
Power MOSFET  
Q2-Class  
IXFR38N80Q2  
VDSS = 800V  
ID25 = 28A  
RDS(on) 240mΩ  
250ns  
trr  
(Electrically Isolated Back Surface)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
TJ = 25°C to 150°C  
800  
800  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
28  
A
A
TC = 25°C, pulse width limited by TJM  
150  
Isolated Tab  
IA  
TC = 25°C  
TC = 25°C  
38  
4
A
J
EAS  
G = Gate  
S = Source  
D = Drain  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
500  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
• Double metal process for low gate  
resistance  
-55 ... +150  
• Silicon chip on DCB substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
• EpoxymeetUL94V-0, flammability  
classification  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
V~  
TSOLD  
VISOL  
FC  
50/60 Hz, RMS, 1 minute  
Mounting force  
2500  
20..120/4.5..27  
5
N/lb.  
• Avalanche energy and current rated  
• Fast intrinsic Rectifier  
Weight  
g
Advantages  
• Easy assembly  
• Space savings  
• High power density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ± 30V, VDS = 0V  
800  
3.0  
V
V
5.5  
± 200 nA  
25 μA  
IDSS  
VDS = VDSS  
VGS = 0V  
TJ = 125°C  
2
mA  
RDS(on)  
VGS = 10V, ID = 19A, Note 1  
240 mΩ  
DS99203A(05/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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