Datasheet > IXFR38N80Q2_08

IXFR38N80Q2_08

更新时间： 2024-11-21 11:14:07

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	106K
描述
HiPerFET Power MOSFET Q2-Class

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中文翻译

获取价格

数据手册

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IXFR38N80Q2_08 数据手册

HiPerFET^TM

Power MOSFET

Q2-Class

IXFR38N80Q2

V_DSS= 800V

I_D25= 28A

R_DS(on)≤ 240mΩ

≤ 250ns

t_rr

(Electrically Isolated Back Surface)

Symbol

V_DSS

Test Conditions

Maximum Ratings

ISOPLUS247 (IXFR)

E153432

T_J= 25°C to 150°C

800

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

150

Isolated Tab

I_A

T_C= 25°C

E_AS

G = Gate

S = Source

D = Drain

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

500

T_J

-55 ... +150

150

°C

Features

T_JM

T_stg

• Double metal process for low gate

resistance

-55 ... +150

• Silicon chip on DCB substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• EpoxymeetUL94V-0, flammability

classification

T_L

Maximum lead temperature for soldering

Plastic body for 10s

300

260

°C

T_SOLD

V_ISOL

F_C

50/60 Hz, RMS, 1 minute

Mounting force

2500

20..120/4.5..27

N/lb.

• Avalanche energy and current rated

• Fast intrinsic Rectifier

Weight

Advantages

• Easy assembly

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ. Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ± 30V, V_DS= 0V

800

3.0

5.5

± 200 nA

25 μA

I_DSS

V_DS= V_DSS

V_GS= 0V

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 19A, Note 1

240 mΩ

DS99203A(05/08)

12 3 4

中文翻译

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