Datasheet > IXFR36N60P

IXFR36N60P

更新时间： 2024-04-09 18:40:54

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
5页	212K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFR36N60P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFR 36N60P

V_DSS

I_D25

600

R_DS(on)≤ 200 mΩ

t_rr

(Electrically Isolated Back Surface)

≤ 200

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

ISOPLUS247 (IXFR)

E153432

V_DSS

V_DGR

T_J= 25° C to 150° C

600

T_J= 25° C to 150° C; R_GS= 1 MΩ

V_GSS

V_GSM

Continuous

Transient

Isolated Tab

= Drain

I_D25

I_DM

T_C=25° C

T_C= 25° C, pulse width limited by T_JM

G = Gate

S = Source

I_AR

T_C=25° C

E_AR

E_AS

T_C=25° C

1.5

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 2 Ω

V/ns

Features

Silicon chip on Direct-Copper-Bond

substrate

T_C= 25° C

208

°C

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

International standard package

Fast recovery diode

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

T_SOLD

V_ISOL

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

50/60 Hz, RMS, 1 minute

300

260

2500

F_C

Weight

Mounting force

20..120/4.6..27

N/lb

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

Easy to mount

Space savings

High power density

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

V_GS= 30 V, V_DS= 0 V

600

3.0

5.0

100

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

T_J= 125° C

R_DS(on)

V_GS= 10 V, I_D= I_T(note 1)

200 mΩ

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

DS99395E(03/06)

12 3 4 5

中文翻译

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