5秒后页面跳转
捷配首页

Datasheet > IRHYB68230CM
IRHYB68230CM PDF预览

IRHYB68230CM

更新时间： 2024-11-05 19:54:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 178K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

阅读下载

中文翻译

获取价格

IRHYB68230CM 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.39
配置：Single最大漏极电流 (Abs) (ID)：16 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：75 W子类别：FET General Purpose Power
表面贴装：NOBase Number Matches：1

IRHYB68230CM 数据手册

 浏览型号IRHYB68230CM的Datasheet PDF文件第2页浏览型号IRHYB68230CM的Datasheet PDF文件第3页浏览型号IRHYB68230CM的Datasheet PDF文件第4页浏览型号IRHYB68230CM的Datasheet PDF文件第5页浏览型号IRHYB68230CM的Datasheet PDF文件第6页浏览型号IRHYB68230CM的Datasheet PDF文件第7页 
PD - 95818  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-257AA)  
IRHYB67230CM  
200V, N-CHANNEL  
TECHNOLOGY  
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
IRHYB67230CM 100K Rads (Si) 0.13Ω 16A  
IRHYB63230CM 300K Rads (Si) 0.13Ω 16A  
IRHYB64230CM 600K Rads (Si) 0.13Ω 16A  
IRHYB68230CM 1000K Rads (Si) 0.13Ω 16A  
Low-Ohmic  
TO-257AA  
Tabless  
International Rectifier’s R6TM technology provides  
superior power MOSFETs for space applications.  
These devices have improved immunity to Single  
Event Effect (SEE) and have been characterized for  
useful performance with Linear Energy Transfer  
(LET) up to 90MeV/(mg/cm2).  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Their combination of very low R  
and faster  
DS(on)  
switching times reduces power loss and increases  
power density in today’s high speed switching  
applications such as DC-DC converters and motor  
controllers. These devices retain all of the well  
established advantages of MOSFETs such as voltage  
control, ease of paralleling and temperature stability  
of electrical parameters.  
Electrically Isolated  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
16  
10  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
64  
DM  
@ T = 25°C  
P
D
75  
W
W/°C  
V
C
0.6  
V
±20  
60  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
mJ  
A
AS  
I
16  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
6.1  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. /1.6 mm from case for 10s)  
4.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
05/10/04  
12345678

中文翻译

下载PDF

与IRHYB68230CM相关器件

型号 品牌 获取价格 描述 数据表
IRHYB9A3034CM INFINEON

获取价格

 		Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package -
IRHYB9A3130CM INFINEON

获取价格

 		Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A3234CM INFINEON

获取价格

 		Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYB9A7034CM INFINEON

获取价格

 		Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package -
IRHYB9A7130CM INFINEON

获取价格

 		Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A7234CM INFINEON

获取价格

 		Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYB9A93034CM INFINEON

获取价格

 		Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A93130CM INFINEON

获取价格

 		Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
IRHYB9A93230CM INFINEON

获取价格

 		Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tables
IRHYB9A97034CM INFINEON

获取价格

 		Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package

与IRHYB68230CM相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证