型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHYB9A97034CM | INFINEON |
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Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package | |
IRHYB9A97130CM | INFINEON |
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Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag | |
IRHYB9A97230CM | INFINEON |
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Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tables | |
IRHYK57133CMSE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA) | |
IRHYK57133CMSEPBF | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 130V, 0.082ohm, 1-Element, N-Channel, Silicon, Me | |
IRHYS593034CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS593034CMPBF | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met | |
IRHYS593Z30CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS597034CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS597034CMPBF | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met |