Datasheet > IRHYS63230CM

IRHYS63230CM

更新时间： 2024-01-04 05:44:29

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	190K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

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IRHYS63230CM 数据手册

PD-96925B

IRHYS67230CM

200V, N-CHANNEL

TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

Product Summary

Part Number

Radiation Level RDS(on)

IRHYS67230CM 100K Rads (Si) 0.13Ω 16A

IRHYS63230CM 300K Rads (Si) 0.13Ω 16A

Low-Ohmic

TO-257AA

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm²). Their combination of

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

very low R

and faster switching times reduces

DS(on)

power loss and increases power density in today’s

high speed switching applications such as DC-DC

converters and motor controllers. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, ease of paralleling

and temperature stability of electrical parameters.

Hermetically Sealed

Ceramic Eyelets

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.6

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

9.0

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

4.3 (Typical)

For footnotes refer to the last page

www.irf.com

01/19/07

12 3 4 5 6 7 8

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