Datasheet > IRHYS9A3130CM

IRHYS9A3130CM

更新时间： 2023-12-06 20:13:02

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	443K
描述
Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, COTS

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IRHYS9A3130CM 数据手册

PD-97844A

IRHYS9A7130CM

JANSR2N7648T3

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

REF: MIL-PRF-19500/775

TECHNOLOGY

Product Summary

QPL Part Number

JANSR2N7648T3

JANSF2N7648T3

Part Number Radiation Level RDS(on)

I_D

IRHYS9A7130CM 100 kRads (Si)

IRHYS9A3130CM 300 kRads (Si)

30A*

35m

Low-Ohmic

TO-257AA

Description

Features

 Low RDS(on)

 Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Ceramic Eyelets

 Light Weight

IR HiRel R9 technology provides superior power MOSFETs

for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been

characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

low RDS(on) and faster switching times reduces the power

losses and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

30*

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

120

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

0.6

Linear Derating Factor

± 20

605

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Lead Temperature (0.063 in./1.6mm from case for 10s)

Weight

°C

300

4.3 (Typical)

* Current is limited by package

For Footnotes, refer to the page 2.

2019-01-14

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHYS9A3130CM相关器件

型号	品牌	获取价格	描述	数据表
IRHYS9A3130CMSCS	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A3234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A3234CMSCS	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A7034CM	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
IRHYS9A7034CMSCS	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
IRHYS9A7130CM	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A7130CMSCS	INFINEON	获取价格	Slash sheet Similar Parts
IRHYS9A7234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A7234CMSCS	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A93034CM	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-25

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