5秒后页面跳转
IRHYS67230CM PDF预览

IRHYS67230CM

更新时间: 2024-11-20 04:23:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 190K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

IRHYS67230CM 数据手册

 浏览型号IRHYS67230CM的Datasheet PDF文件第2页浏览型号IRHYS67230CM的Datasheet PDF文件第3页浏览型号IRHYS67230CM的Datasheet PDF文件第4页浏览型号IRHYS67230CM的Datasheet PDF文件第5页浏览型号IRHYS67230CM的Datasheet PDF文件第6页浏览型号IRHYS67230CM的Datasheet PDF文件第7页 
PD-96925B  
IRHYS67230CM  
200V, N-CHANNEL  
TECHNOLOGY  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-257AA)  
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
IRHYS67230CM 100K Rads (Si) 0.1316A  
IRHYS63230CM 300K Rads (Si) 0.1316A  
Low-Ohmic  
TO-257AA  
International Rectifier’s R6TM technology provides  
superior power MOSFETs for space applications.  
These devices have improved immunity to Single  
Event Effect (SEE) and have been characterized for  
useful performance with Linear Energy Transfer  
(LET) up to 90MeV/(mg/cm2). Their combination of  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
very low R  
and faster switching times reduces  
DS(on)  
power loss and increases power density in today’s  
high speed switching applications such as DC-DC  
converters and motor controllers. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, ease of paralleling  
and temperature stability of electrical parameters.  
Hermetically Sealed  
Ceramic Eyelets  
Electrically Isolated  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
16  
10  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
64  
DM  
@ T = 25°C  
P
D
75  
W
W/°C  
V
C
0.6  
V
±20  
83  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
mJ  
A
AS  
I
16  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
9.0  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. /1.6 mm from case for 10s)  
4.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
01/19/07  

与IRHYS67230CM相关器件

型号 品牌 获取价格 描述 数据表
IRHYS67230CMSCS INFINEON

获取价格

Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67230CMSCV INFINEON

获取价格

Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67230CSCS INFINEON

获取价格

Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67234CM INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67234CMSCS INFINEON

获取价格

Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67234CMSCV INFINEON

获取价格

Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7130CM INFINEON

获取价格

Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7130CMSCS INFINEON

获取价格

Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7230CM INFINEON

获取价格

Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7230CMSCS INFINEON

获取价格

Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257