Datasheet > IRHYS6S7234CMSCS

IRHYS6S7234CMSCS

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1068K
描述
Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL

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IRHYS6S7234CMSCS 数据手册

PD-97933A

IRHYS6S7234CM

250V, N-CHANNEL

RADIATION HARDENED

TECHNOLOGY

POWER MOSFET

THRU-HOLE (LOW OHMIC - TO-257AA)

Product Summary

Part Number

Radiation Level RDS(on)

I_D

IRHYS6S7234CM 100 kRads(Si)

12A

0.22

IRHYS6S3234CM

300 kRads(Si)

Low-Ohmic

TO-257AA

Description

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Eyelets

IR HiRel R6 S-line technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

60 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching and temperature stability of electrical

parameters.

 Electrically Isolated

 Light Weight



ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

7.6

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.6

± 20

V_GS

E_AS

I_AR

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

7.5

5.2

V/ns

-55 to 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

4.3 (Typical)

Weight

For footnotes refer to the page 2.

2020-06-15

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHYS6S7234CMSCS相关器件

型号	品牌	获取价格	描述	数据表
IRHYS9A3034CM	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
IRHYS9A3130CM	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A3130CMSCS	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A3234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A3234CMSCS	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A7034CM	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
IRHYS9A7034CMSCS	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
IRHYS9A7130CM	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A7130CMSCS	INFINEON	获取价格	Slash sheet Similar Parts
IRHYS9A7234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257

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