Datasheet > 晶体管 > 功率场效应晶体管> IRHYS67130CM

IRHYS67130CM

更新时间： 2024-02-05 19:01:44

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	184K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

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IRHYS67130CM 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

IRHYS67130CM 数据手册

PD-96986

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

IRHYS67130CM

100V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

IRHYS67130CM 100K Rads (Si) 0.042Ω 20A*

IRHYS63130CM 300K Rads (Si) 0.042Ω 20A*

Low-Ohmic

TO-257AA

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm²). Their combination of

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

very low R

and faster switching times reduces

DS(on)

power loss and increases power density in today’s

high speed switching applications such as DC-DC

converters and motor controllers. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, ease of paralleling

and temperature stability of electrical parameters.

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

20*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.6

±20

107

Single Pulse Avalanche Energy Á

Avalanche Current À

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

5.5

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

4.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

03/08/05

12 3 4 5 6 7 8

中文翻译

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与IRHYS67130CM相关器件

型号	品牌	获取价格	描述	数据表
IRHYS67130CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IRHYS67130CMSCS	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67130CMSCSB	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYS67130CSCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYS67130CSCSA	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67134CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67134CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
IRHYS67134CMSCS	INFINEON	获取价格	Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67230CMSCS	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257

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