Datasheet > IRHYS9A3130CMSCS

IRHYS9A3130CMSCS

更新时间： 2024-11-19 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	443K
描述
Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, QIRL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHYS9A3130CMSCS 数据手册

PD-97844A

IRHYS9A7130CM

JANSR2N7648T3

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

REF: MIL-PRF-19500/775

TECHNOLOGY

Product Summary

QPL Part Number

JANSR2N7648T3

JANSF2N7648T3

Part Number Radiation Level RDS(on)

I_D

IRHYS9A7130CM 100 kRads (Si)

IRHYS9A3130CM 300 kRads (Si)

30A*

35m

Low-Ohmic

TO-257AA

Description

Features

 Low RDS(on)

 Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Ceramic Eyelets

 Light Weight

IR HiRel R9 technology provides superior power MOSFETs

for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been

characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

low RDS(on) and faster switching times reduces the power

losses and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

30*

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

120

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

0.6

Linear Derating Factor

± 20

605

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Lead Temperature (0.063 in./1.6mm from case for 10s)

Weight

°C

300

4.3 (Typical)

* Current is limited by package

For Footnotes, refer to the page 2.

2019-01-14

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRHYS9A3130CMSCS相关器件

型号	品牌	获取价格	描述	数据表
IRHYS9A3234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A3234CMSCS	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A7034CM	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
IRHYS9A7034CMSCS	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
IRHYS9A7130CM	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A7130CMSCS	INFINEON	获取价格	Slash sheet Similar Parts
IRHYS9A7234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A7234CMSCS	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A93034CM	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-25
IRHYS9A93130CM	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-2

与IRHYS9A3130CMSCS相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYS9A3130CMSCS

IRHYS9A3130CMSCS 数据手册

与IRHYS9A3130CMSCS相关器件

与IRHYS9A3130CMSCS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYS9A3130CMSCS

IRHYS9A3130CMSCS 数据手册

与IRHYS9A3130CMSCS相关器件

与IRHYS9A3130CMSCS相关文章

您还可以找

您在本页遇到什么问题？