Datasheet > IRHYS6S7230CMSCS

IRHYS6S7230CMSCS

更新时间： 2024-02-23 09:11:26

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	489K
描述
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHYS6S7230CMSCS 数据手册

PD-97858

IRHYS6S7230CM

200V, N-CHANNEL

RADIATION HARDENED

TECHNOLOGY

POWER MOSFET

THRU-HOLE (LOW OHMIC - TO-257AA)

Product Summary

Part Number

Radiation Level RDS(on)

I_D

IRHYS6S7230CM 100 kRads(Si)

16A

0.13

IRHYS6S3230CM

300 kRads(Si)

Low-Ohmic

TO-257AA

Description

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

IR HiRel R6 S-line technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

60 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

0.6

Pulsed Drain Current 

I_DM

W/°C

Maximum Power Dissipation

P_D@T_C= 25°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

V_GS

E_AS

I_AR

7.5

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

E_AR

dv/dt

T_J

9.0

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

4.3 (Typical)

Weight

For footnotes refer to the page 2.

2017-03-02

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRHYS6S7230CMSCS相关器件

型号	品牌	获取价格	描述	数据表
IRHYS6S7234CM	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7234CMSCS	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A3034CM	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
IRHYS9A3130CM	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A3130CMSCS	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A3234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A3234CMSCS	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A7034CM	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
IRHYS9A7034CMSCS	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
IRHYS9A7130CM	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257

与IRHYS6S7230CMSCS相关文章

LTM4644/LTM4644-1：创新的四输出同步降压微模块调节器
2024-07-02

3
2N3500：一款多用途NPN硅晶体管的全面解析
2024-07-02

6
最详细资料解析：BA5917AFP参数说明、引脚说明
2024-07-02

10
MAX232IDR数据手册：产品特性、电气参数、替代型号推荐
2024-07-02

4

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYS6S7230CMSCS

IRHYS6S7230CMSCS 数据手册

与IRHYS6S7230CMSCS相关器件

与IRHYS6S7230CMSCS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYS6S7230CMSCS

IRHYS6S7230CMSCS 数据手册

与IRHYS6S7230CMSCS相关器件

与IRHYS6S7230CMSCS相关文章

您还可以找

您在本页遇到什么问题？