Datasheet > IRHYS67230CSCS

IRHYS67230CSCS

更新时间： 2024-11-22 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1389K
描述
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL

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IRHYS67230CSCS 数据手册

IRHYS67230CM (JANSR2N7592T3)

PD-96925D

Radiation Hardened Power MOSFET

Thru-Hole (Low-Ohmic TO-257AA)

200V, 16A, N-channel, R6 Technology

Product Summary

Features



Single event effect (SEE) hardened



Part number: IRHYS67230CM

IRHYS63230CM

Radiation level: 100 krad(Si),

300 krad(Si)

R_DS(on),max: 130m

I_D: 16A

Low R_DS(on)



Fast switching

Low total gate charge

Simple drive requirements

Hermetically sealed

Ceramic eyelets



Light weight

Electrically Isolated

Potential Applications



DC-DC converter

Motor drives

Low-Ohmic

TO-257AA



Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications. This technology has

over a decade of proven performance and reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low gate

charge reduces the power losses in switching applications such as DC to DC converters and motor control. These

devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHYS67230CM

Ordering options

Package

Screening Level

COTS

TID Level

TO-257AA

100 krad(Si)

300 krad(Si)

IRHYS67230CMSCS

JANSR2N7592T3

IRHYS63230CM

TO-257AA

S-Level

JANS

COTS

IRHYS63230CMSCS

S-Level

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2021-08-06

12 3 4 5 6 7...14

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与IRHYS67230CSCS相关器件

型号	品牌	获取价格	描述	数据表
IRHYS67234CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67234CMSCS	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67234CMSCV	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7130CM	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7130CMSCS	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7230CM	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7230CMSCS	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7234CM	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7234CMSCS	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS9A3034CM	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A

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