Datasheet > IRHYS67230CMSCV

IRHYS67230CMSCV

更新时间： 2024-11-19 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1389K
描述
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QIRL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHYS67230CMSCV 数据手册

IRHYS67230CM (JANSR2N7592T3)

PD-96925D

Radiation Hardened Power MOSFET

Thru-Hole (Low-Ohmic TO-257AA)

200V, 16A, N-channel, R6 Technology

Product Summary

Features



Single event effect (SEE) hardened



Part number: IRHYS67230CM

IRHYS63230CM

Radiation level: 100 krad(Si),

300 krad(Si)

R_DS(on),max: 130m

I_D: 16A

Low R_DS(on)



Fast switching

Low total gate charge

Simple drive requirements

Hermetically sealed

Ceramic eyelets



Light weight

Electrically Isolated

Potential Applications



DC-DC converter

Motor drives

Low-Ohmic

TO-257AA



Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications. This technology has

over a decade of proven performance and reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low gate

charge reduces the power losses in switching applications such as DC to DC converters and motor control. These

devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHYS67230CM

Ordering options

Package

Screening Level

COTS

TID Level

TO-257AA

100 krad(Si)

300 krad(Si)

IRHYS67230CMSCS

JANSR2N7592T3

IRHYS63230CM

TO-257AA

S-Level

JANS

COTS

IRHYS63230CMSCS

S-Level

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2021-08-06

12 3 4 5 6 7...14

中文翻译

下载PDF

与IRHYS67230CMSCV相关器件

型号	品牌	获取价格	描述	数据表
IRHYS67230CSCS	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67234CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67234CMSCS	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67234CMSCV	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7130CM	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7130CMSCS	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7230CM	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7230CMSCS	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7234CM	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS6S7234CMSCS	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257

与IRHYS67230CMSCV相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYS67230CMSCV

IRHYS67230CMSCV 数据手册

与IRHYS67230CMSCV相关器件

与IRHYS67230CMSCV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYS67230CMSCV

IRHYS67230CMSCV 数据手册

与IRHYS67230CMSCV相关器件

与IRHYS67230CMSCV相关文章

您还可以找

您在本页遇到什么问题？