Datasheet > IRHYS67130CA

IRHYS67130CA

更新时间： 2024-11-05 19:49:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	434K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IRHYS67130CA 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Base Number Matches：	1

IRHYS67130CA 数据手册

PD-96986B

IRHYS67130CM

JANSR2N7588T3

100V, N-CHANNEL

REF: MIL-PRF-19500/755

TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

Product Summary

Part Number

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7588T3

JANSF2N7588T3

IRHYS67130CM 100 kRads(Si)

20A*

0.042

IRHYS63130CM

300 kRads(Si)

Low-Ohmic

TO-257AA

Description

Features

 Low RDS(on)

IRHYS67130CM is part of the International Rectifier HiRel

family of products. IR HiRel R6 technology provides high

performance power MOSFETs for space applications.

These devices have been characterized for both Total

Dose and Single Event Effect (SEE) with useful

performance up to LET of 90 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-DC

converters and motor controllers. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight



ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

20*

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

0.6

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

107

V_GS

E_AS

I_AR

7.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

5.5

V/ns

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

4.3 (Typical)

Weight

*Current is limited by package

For footnotes refer to the page 2.

2017-12-21

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRHYS67130CA相关器件

型号	品牌	获取价格	描述	数据表
IRHYS67130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67130CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IRHYS67130CMSCS	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67130CMSCSB	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYS67130CSCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYS67130CSCSA	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67134CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67134CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
IRHYS67134CMSCS	INFINEON	获取价格	Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

与IRHYS67130CA相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYS67130CA

IRHYS67130CA 技术参数

IRHYS67130CA 数据手册

与IRHYS67130CA相关器件

与IRHYS67130CA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYS67130CA

IRHYS67130CA 技术参数

IRHYS67130CA 数据手册

与IRHYS67130CA相关器件

与IRHYS67130CA相关文章

您还可以找

您在本页遇到什么问题？