Datasheet > IRHYB9A97130CM

IRHYB9A97130CM

更新时间： 2024-11-19 14:56:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	1059K
描述
Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 100 krad(Si) TID, COTS

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IRHYB9A97130CM 数据手册

IRHYS9A97130CM, IRHYB9A97130CM

Radiation Hardened Power MOSFET

-100V, 23A, P-channel, R9 Technology

PD-97957A

Features

Product Summary



Single event effect (SEE) hardened



BV_DSS: -100V

I_D: -23A

R_{DS(on), max}: 76m

Q_Gmax: 50nC

REF: MIL-PRF-19500/780

(up to LET of 91.2 MeV·cm²/mg)

Low R_DS(on)



Rugged SOA

Improved avalanche energy

Simple drive requirements

Hermetically sealed

Electrically isolated case

Ceramic eyelets (Low-Ohmic TO-257AA)

Light weight

ESD rating: class 2 per MIL-STD-750, Method 1020

Low – Ohmic

TO-257AA

Tabless

TO-257AA

Potential Applications



DC-DC converter

Motor drives

Latching current limiter

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel

MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices

have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with

Linear Energy Transfer (LET) up to 91.2 MeV·cm²/mg. Their combination of low R_DS(on)and improved SOA allows

for better performance in applications such as Latching Current Limiters (LCL), Solid-State Power Controllers

(SSPC) or DC-DC converters. These devices retain all of the well-established advantages of MOSFETs such as

voltage control, fast switching and temperature stability of electrical parameters.

Ordering Information

Table 1

Ordering options

Part number

Package

Screening Level

COTS

TID Level

IRHYS9A97130CM

JANSR2N7660T3

IRHYS9A93130CM

JANSF2N7660T3

IRHYB9A97130CM

JANSR2N7660D5

IRHYB9A93130CM

JANSF2N7660D5

Low-Ohmic TO-257AA

Tabless TO-257AA

100 krad(Si)

300 krad(Si)

100 krad(Si)

300 krad(Si)

JANS

COTS

JANS

COTS

Tabless TO-257AA

JANS

Tabless TO-257AA

COTS

Tabless TO-257AA

COTS

Please read the Important Notice and Warnings at the end of this document

page 1 of 15

www.infineon.com/irhirel

2022-08-23

12 3 4 5 6 7...15

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与IRHYB9A97130CM相关器件

型号	品牌	获取价格	描述	数据表
IRHYB9A97230CM	INFINEON	获取价格	Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tables
IRHYK57133CMSE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
IRHYK57133CMSEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 130V, 0.082ohm, 1-Element, N-Channel, Silicon, Me
IRHYS593034CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS593034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met
IRHYS593Z30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS597034CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS597034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met
IRHYS597Z30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS597Z30CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Met

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