Datasheet > IRHYB9A97230CM

IRHYB9A97230CM

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	803K
描述
Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tabless TO-257AA package, 100 krad(Si) TID, COTS

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IRHYB9A97230CM 数据手册

IRHYS9A97230CM, IRHYB9A97230CM

Radiation Hardened Power MOSFET

PD-97960B

Thru-Hole (Low-Ohmic TO-257AA)

-200V, -14A, P-channel, R9 Superjunction Technology

Features

Product Summary



Single event effect (SEE) hardened



BV_DSS: -200V

I_D: -14A

R_DS(on),max: 175m

Q_G,max: 49nC

(up to LET of 90.5 MeV·cm²/mg)

Improved SOA for linear mode operation

Low R_DS(on)



REF: MIL-PRF-19500/780

Improved avalanche energy

Simple drive requirements

Hermetically sealed

Electrically isolated

Ceramic eyelets

ESD rating: class 2 per MIL-STD-750, Method 1020

Tabless

TO-257AA

Potential Applications

Low – Ohmic

TO-257AA



Motor drives

DC-DC converter

Latching current limiter

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel MOSFETs

are the first radiation hardened devices that are based on a superjunction technology. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 90.5 MeV·cm²/mg. Their combination of low R_DS(on)and improved SOA allows for better

performance in applications such as Latching Current Limiters (LCL), Solid-State Power Controllers (SSPC) or DC-

DC converters. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast

switching and temperature stability of electrical parameters.

Ordering Information

Table 1

Ordering options

Part number

Package

Screening Level

COTS

TID Level

IRHYS9A97230CM

JANSR2N7661T3

IRHYS9A93230CM

JANSF2N7661T3

IRHYB9A97230CM

JANSR2N7661D5

IRHYB9A93230CM

JANSF2N7661D5

Low-Ohmic TO-257AA

Tabless TO-257AA

100 krad(Si)

300 krad(Si)

100 krad(Si)

300 krad(Si)

JANS

COTS

JANS

COTS

Tabless TO-257AA

JANS

Tabless TO-257AA

COTS

Tabless TO-257AA

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 15

www.infineon.com/irhirel

2022-12-13

12 3 4 5 6 7...15

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与IRHYB9A97230CM相关器件

型号	品牌	获取价格	描述	数据表
IRHYK57133CMSE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
IRHYK57133CMSEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 130V, 0.082ohm, 1-Element, N-Channel, Silicon, Me
IRHYS593034CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS593034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met
IRHYS593Z30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS597034CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS597034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met
IRHYS597Z30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS597Z30CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHYS63130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

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