是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XSFM-P3 | Reach Compliance Code: | compliant |
风险等级: | 5.7 | 雪崩能效等级(Eas): | 107 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 20 A |
最大漏源导通电阻: | 0.042 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AA | JESD-30 代码: | R-XSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 80 A |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHYS63134CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS63134CMPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met | |
IRHYS63134CMSCS | INFINEON |
获取价格 |
Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257 | |
IRHYS63230CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS63234CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS67130C | INFINEON |
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Power Field-Effect Transistor, | |
IRHYS67130CA | INFINEON |
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Power Field-Effect Transistor, | |
IRHYS67130CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS67130CMPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me | |
IRHYS67130CMSCS | INFINEON |
获取价格 |
Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257 |