Datasheet > IRHYS63134CMPBF

IRHYS63134CMPBF

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	190K
描述
Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3

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IRHYS63134CMPBF 数据手册

PD-96930C

2N7590T3

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

IRHYS67134CM

150V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

IRHYS67134CM 100K Rads (Si) 0.090Ω 19A

IRHYS63134CM 300K Rads (Si) 0.090Ω 19A

Low-Ohmic

TO-257AA

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm²). Their combination of

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Electrically Isolated

Light Weight

ESD Rating: Class 2 per MIL-STD-750,

Method 1020

very low R

and faster switching times reduces

DS(on)

power loss and increases power density in today’s

high speed switching applications such as DC-DC

converters and motor controllers. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, ease of paralleling

and temperature stability of electrical parameters.

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

7.8

-55 to 150

°C

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

4.3 (Typical)

For footnotes refer to the last page

www.irf.com

01/31/14

12 3 4 5 6 7...9

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与IRHYS63134CMPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHYS63134CMSCS	INFINEON	获取价格	Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS63230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS63234CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67130C	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYS67130CA	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYS67130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67130CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IRHYS67130CMSCS	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67130CMSCSB	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYS67130CSCS	INFINEON	获取价格	Power Field-Effect Transistor,

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