型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHYS63230CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS63234CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS67130C | INFINEON |
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Power Field-Effect Transistor, | |
IRHYS67130CA | INFINEON |
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Power Field-Effect Transistor, | |
IRHYS67130CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS67130CMPBF | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me | |
IRHYS67130CMSCS | INFINEON |
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Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257 | |
IRHYS67130CMSCSB | INFINEON |
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Power Field-Effect Transistor, | |
IRHYS67130CSCS | INFINEON |
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Power Field-Effect Transistor, | |
IRHYS67130CSCSA | INFINEON |
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Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257 |