Datasheet > IRHYS63134CMSCS

IRHYS63134CMSCS

更新时间： 2023-12-06 20:13:14

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	802K
描述
Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, QIRL

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IRHYS63134CMSCS 数据手册

IRHYS67134CM (JANSR2N7590T3)

PD-96930D

Radiation Hardened Power MOSFET

Thru-Hole (Low–Ohmic TO-257AA)

150V, 19A, N-channel, R6 Technology

Features

Product Summary

•

Single event effect (SEE) hardened

Low R_{DS (on)}

•

BV_DSS: 150V

I_D:19A

R_{DS (on), max:}90m

Q_{G, max:}50nC

Low total gate charge

Fast switching

Simple drive requirements

Hermetically sealed

REF: MIL-PRF-19500/755

Electrically isolated

Ceramic eyelets

Light weight

ESD rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

•

Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails

Synchronous rectification

Low-Ohmic

TO-257AA

Active ORing circuits

Power distribution circuits

Load switch

Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90

(MeV·cm²/mg). The combination of low R_DS(on)and low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor controllers. These devices retain all of the well-established

advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

Ordering Information

Table 1

Part number

IRHYS67134CM

Ordering options

Package

Screening Level

COTS

TID Level

Low-Ohmic TO-257AA

100 krad(Si)

300 krad(Si)

IRHYS67134CMSCS

JANSR2N7590T3

IRHYS63134CM

S-Level

JANS

COTS

IRHYS63134CMSCS

JANSF2N7590T3

S-Level

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2023-08-03

12 3 4 5 6 7...14

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与IRHYS63134CMSCS相关器件

型号	品牌	获取价格	描述	数据表
IRHYS63230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS63234CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67130C	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYS67130CA	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYS67130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67130CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IRHYS67130CMSCS	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
IRHYS67130CMSCSB	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYS67130CSCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYS67130CSCSA	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257

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