是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-257AA |
包装说明: | FLANGE MOUNT, R-XSFM-P3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.21 | Is Samacsys: | N |
雪崩能效等级(Eas): | 200 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.072 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AA |
JESD-30 代码: | R-XSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 80 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHYS63130CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
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IRHYS63130CMPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me |
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IRHYS63134CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
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IRHYS63134CMPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met |
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IRHYS63134CMSCS | INFINEON |
获取价格 |
Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257 |
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IRHYS63230CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
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IRHYS63234CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
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IRHYS67130C | INFINEON |
获取价格 |
Power Field-Effect Transistor, |
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IRHYS67130CA | INFINEON |
获取价格 |
Power Field-Effect Transistor, |
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IRHYS67130CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |
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