型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHYS597034CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS597034CMPBF | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met | |
IRHYS597Z30CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS597Z30CMPBF | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Met | |
IRHYS63130CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS63130CMPBF | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me | |
IRHYS63134CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYS63134CMPBF | INFINEON |
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Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met | |
IRHYS63134CMSCS | INFINEON |
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Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257 | |
IRHYS63230CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) |