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IRHYS597Z30CM PDF预览

IRHYS597Z30CM

更新时间: 2024-11-05 03:10:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 198K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

IRHYS597Z30CM 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:FLANGE MOUNT, R-XSFM-P3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
雪崩能效等级(Eas):200 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):20 A最大漏极电流 (ID):20 A
最大漏源导通电阻:0.072 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-257AAJESD-30 代码:R-XSFM-P3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):75 W最大脉冲漏极电流 (IDM):80 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:TIN LEAD
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHYS597Z30CM 数据手册

 浏览型号IRHYS597Z30CM的Datasheet PDF文件第2页浏览型号IRHYS597Z30CM的Datasheet PDF文件第3页浏览型号IRHYS597Z30CM的Datasheet PDF文件第4页浏览型号IRHYS597Z30CM的Datasheet PDF文件第5页浏览型号IRHYS597Z30CM的Datasheet PDF文件第6页浏览型号IRHYS597Z30CM的Datasheet PDF文件第7页 
                                                                         
PD-96899  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-257AA)  
IRHYS597Z30CM  
30V, P-CHANNEL  
TECHNOLOGY  
5
™
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
IRHYS597Z30CM 100K Rads (Si) 0.072-20A*  
IRHYS593Z30CM 300K Rads (Si) 0.072-20A*  
Low-Ohmic  
TO-257AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Electrically Isolated  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-20*  
-18  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
-80  
DM  
@ T = 25°C  
P
D
75  
W
W/°C  
V
C
0.6  
V
±20  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
200  
mJ  
A
AS  
I
-20  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
-1.84  
-55 to 150  
T
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10s)  
4.3 ( Typical )  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
12/21/04  

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