Datasheet > IRHYB9A3130CM

IRHYB9A3130CM

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	442K
描述
Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 300 krad(Si) TID, COTS

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IRHYB9A3130CM 数据手册

PD-97910

IRHYB9A7130CM

JANSR2N7648D5

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA Tabless)

REF: MIL-PRF-19500/775

TECHNOLOGY

Product Summary

QPL Part Number

JANSR2N7648D5

JANSF2N7648D5

Part Number

IRHYB9A7130CM

IRHYB9A3130CM

Radiation Level RDS(on)

I_D

100 kRads (Si)

300 kRads (Si)

30A*

35m

Low-Ohmic

TO-257AA Tabless

Description

Features

 Low RDS(on)

 Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

IR HiRel R9 technology provides superior power MOSFETs

for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been

characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

low RDS(on) and faster switching times reduces the power

losses and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 Electrically Isolated

 Light Weight

 ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

30*

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

120

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

0.6

Linear Derating Factor

± 20

605

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Lead Temperature (0.063 in./1.6mm from case for 10s)

Weight

°C

300

4.3 (Typical)

* Current is limited by package

For Footnotes, refer to the page 2.

2019-02-04

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHYB9A3130CM相关器件

型号	品牌	获取价格	描述	数据表
IRHYB9A3234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYB9A7034CM	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package -
IRHYB9A7130CM	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A7234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYB9A93034CM	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A93130CM	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
IRHYB9A93230CM	INFINEON	获取价格	Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tables
IRHYB9A97034CM	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A97130CM	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
IRHYB9A97230CM	INFINEON	获取价格	Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tables

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