Datasheet > IRHYB9A93034CM

IRHYB9A93034CM

更新时间： 2024-11-06 14:56:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	746K
描述
Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 300 krad(Si) TID, COTS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHYB9A93034CM 数据手册

IRHYB9A97034CM (JANSR2N7659D5)

Radiation Hardened Power MOSFET

PD-97993

Thru-Hole (Low-Ohmic Tabless TO-257AA)

-60V, -30A, P-channel, R9 Superjunction Technology

Product Summary

Features

•

Single event effect (SEE) hardened

•

Part number: IRHYB9A97034CM (JANSR2N7659D5),

IRHYB9A93034CM (JANSF2N7659D5)

REF: MIL-PRF-19500/780

Radiation level: 100 krad (Si), 300 krad (Si)

R_{DS(on), max}: 46m

(up to LET of 91.3 MeV·cm²/mg)

Low R_DS(on)

•

Improved SOA for linear mode operation

Improved avalanche energy

Simple drive requirements

Hermetically sealed

I_D: -30A*

Electrically isolated

ESD rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

•

Power distribution

Low Ohmic Tabless -

TO-257AA

Linear regulator

Latching current limiter

Load and protection switch

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel

MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices

have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with

Linear Energy Transfer (LET) up to 91.3 MeV·cm²/mg. Their combination of low R_DS(on)and improved SOA allows

for better performance in applications such as Latching Current Limiters (LCL) or Solid-State Power Controllers

(SSPC). These devices retain all of the well established advantages of MOSFETs such as voltage control, fast

switching and temperature stability of electrical parameters.

Ordering Information

Table 1

Ordering options

Part number

Package

Screening Level

COTS

TID Level

IRHYB9A97034CM

JANSR2N7659D5

IRHYB9A93034CM

JANSF2N7659D5

Low Ohmic Tabless TO-257AA

100krad(Si)

300krad(Si)

JANS

COTS

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2021-11-08

12 3 4 5 6 7...14

中文翻译

下载PDF

与IRHYB9A93034CM相关器件

型号	品牌	获取价格	描述	数据表
IRHYB9A93130CM	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
IRHYB9A93230CM	INFINEON	获取价格	Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tables
IRHYB9A97034CM	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A97130CM	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
IRHYB9A97230CM	INFINEON	获取价格	Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tables
IRHYK57133CMSE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
IRHYK57133CMSEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 130V, 0.082ohm, 1-Element, N-Channel, Silicon, Me
IRHYS593034CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS593034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met
IRHYS593Z30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

与IRHYB9A93034CM相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYB9A93034CM

IRHYB9A93034CM 数据手册

与IRHYB9A93034CM相关器件

与IRHYB9A93034CM相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYB9A93034CM

IRHYB9A93034CM 数据手册

与IRHYB9A93034CM相关器件

与IRHYB9A93034CM相关文章

您还可以找

您在本页遇到什么问题？