Datasheet > IRHYS593034CMPBF

IRHYS593034CMPBF

更新时间： 2024-11-18 21:02:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	200K
描述
Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3

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IRHYS593034CMPBF 数据手册

ꢁ

PD-96911

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

IRHYS597034CM

60V, P-CHANNEL

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

IRHYS597034CM 100K Rads (Si) 0.087Ω -20A

IRHYS593034CM 300K Rads (Si) 0.087Ω -20A

Low-Ohmic

TO-257AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Electrically Isolated

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-20

-13

= -12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

-80

@ T = 25°C

W/°C

0.6

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

134

-20

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

-4.9

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10s)

4.3 ( Typical )

For footnotes refer to the last page

www.irf.com

01/07/05

12 3 4 5 6 7 8

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与IRHYS593034CMPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHYS593Z30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS597034CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS597034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met
IRHYS597Z30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS597Z30CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHYS63130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS63130CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IRHYS63134CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS63134CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
IRHYS63134CMSCS	INFINEON	获取价格	Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257

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