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IRHYK57133CMSEPBF PDF预览

IRHYK57133CMSEPBF

更新时间: 2024-11-18 21:13:03
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
8页 190K
描述
Power Field-Effect Transistor, 20A I(D), 130V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-257AA, 3 PIN

IRHYK57133CMSEPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:IN-LINE, R-XSIP-T3Reach Compliance Code:compliant
风险等级:5.7雪崩能效等级(Eas):73 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:130 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.082 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):80 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRHYK57133CMSEPBF 数据手册

 浏览型号IRHYK57133CMSEPBF的Datasheet PDF文件第2页浏览型号IRHYK57133CMSEPBF的Datasheet PDF文件第3页浏览型号IRHYK57133CMSEPBF的Datasheet PDF文件第4页浏览型号IRHYK57133CMSEPBF的Datasheet PDF文件第5页浏览型号IRHYK57133CMSEPBF的Datasheet PDF文件第6页浏览型号IRHYK57133CMSEPBF的Datasheet PDF文件第7页 
                                                                         
PD - 96898  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (Low-Ohmic TO-257AA)  
IRHYK57133CMSE  
130V, N-CHANNEL  
TECHNOLOGY  
5
™
™
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
IRHYK57133CMSE 100K Rads (Si)  
0.08220A  
Low-Ohmic  
TO-257AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Electrically Isolated  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
= 12V, T = 25°C Continuous Drain Current  
20  
12.5  
80  
D
GS  
GS  
C
A
I @ V  
D
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
73  
mJ  
A
AS  
I
20  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
11.3  
-55 to 150  
T
J
T
Storage Temperature Range  
oC  
g
STG  
Pack. Mounting Surface Temp.  
Weight  
300 (for 5s)  
3.7 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
10/28/04  

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