Datasheet > IRHYB9A7234CM

IRHYB9A7234CM

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	713K
描述
Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, COTS

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IRHYB9A7234CM 数据手册

IRHYS9A7234CM, IRHYB9A7234CM

Radiation Hardened Power MOSFET

PD-97886B

250V, 17A, N-channel, R9 Superjunction Technology

Product Summary

Features

•

Low R_DS(on)

Fast switching

Single event effect (SEE) hardened

Low total gate charge

Simple drive requirements

Hermetically sealed

Electrically isolated case

Ceramic eyelets (Low-Ohmic TO-257AA)

ESD rating: class 2 per MIL-STD-750, Method 1020

•

BV_DSS: 250V

I_D: 17A

R_{DS(on), max}: 110m

Q_{G, max}: 34nC

REF: MIL-PRF-19500/775

Potential

Applications

•

DC-DC converter

Motor drives

Electric propulsion

Tabless

TO-257AA

Low – Ohmic

TO-257AA

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 88.6 MeV·cm²/mg. Their combination of low R_DS(on)and faster switching times reduces the

power losses and increases power density in today’s high speed switching applications such as DC-DC

converters and motor controllers. These devices retain all of the well-established advantages of MOSFETs such

as voltage control, fast switching and temperature stability of electrical parameters.

Ordering Information

Table 1

Ordering options

Part number

Package

Screening Level

COTS

TID Level

IRHYS9A7234CM

JANSR2N7649T3

IRHYS9A3234CM

JANSF2N7649T3

IRHYB9A7234CM

JANSR2N7649D5

IRHYB9A3234CM

JANSF2N7649D5

Low-Ohmic TO-257AA

Tabless TO-257AA

100 krad(Si)

300 krad(Si)

100 krad(Si)

300 krad(Si)

JANS

COTS

JANS

COTS

Tabless TO-257AA

JANS

Tabless TO-257AA

COTS

Tabless TO-257AA

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 15

www.infineon.com/irhirel

2022-05-09

12 3 4 5 6 7...15

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与IRHYB9A7234CM相关器件

型号	品牌	获取价格	描述	数据表
IRHYB9A93034CM	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A93130CM	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
IRHYB9A93230CM	INFINEON	获取价格	Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tables
IRHYB9A97034CM	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A97130CM	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
IRHYB9A97230CM	INFINEON	获取价格	Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tables
IRHYK57133CMSE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
IRHYK57133CMSEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 130V, 0.082ohm, 1-Element, N-Channel, Silicon, Me
IRHYS593034CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS593034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met

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