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IRHYB9A93130CM PDF预览

IRHYB9A93130CM

更新时间: 2024-11-06 14:56:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
15页 1059K
描述
Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 300 krad(Si) TID, COTS

IRHYB9A93130CM 数据手册

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IRHYS9A97130CM, IRHYB9A97130CM  
Radiation Hardened Power MOSFET  
-100V, 23A, P-channel, R9 Technology  
PD-97957A  
Features  
Product Summary  
Single event effect (SEE) hardened  
BVDSS: -100V  
ID : -23A  
RDS(on), max : 76m  
QGmax : 50nC  
REF: MIL-PRF-19500/780  
(up to LET of 91.2 MeV·cm2/mg)  
Low RDS(on)  
Rugged SOA  
Improved avalanche energy  
Simple drive requirements  
Hermetically sealed  
Electrically isolated case  
Ceramic eyelets (Low-Ohmic TO-257AA)  
Light weight  
ESD rating: class 2 per MIL-STD-750, Method 1020  
Low – Ohmic  
TO-257AA  
Tabless  
TO-257AA  
Potential Applications  
DC-DC converter  
Motor drives  
Latching current limiter  
Product Validation  
Qualified according to MIL-PRF-19500 for space applications  
Description  
IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel  
MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices  
have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with  
Linear Energy Transfer (LET) up to 91.2 MeV·cm2/mg. Their combination of low RDS(on) and improved SOA allows  
for better performance in applications such as Latching Current Limiters (LCL), Solid-State Power Controllers  
(SSPC) or DC-DC converters. These devices retain all of the well-established advantages of MOSFETs such as  
voltage control, fast switching and temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Ordering options  
Part number  
Package  
Screening Level  
COTS  
TID Level  
IRHYS9A97130CM  
JANSR2N7660T3  
IRHYS9A93130CM  
JANSF2N7660T3  
IRHYB9A97130CM  
JANSR2N7660D5  
IRHYB9A93130CM  
JANSF2N7660D5  
Low-Ohmic TO-257AA  
Low-Ohmic TO-257AA  
Low-Ohmic TO-257AA  
Low-Ohmic TO-257AA  
Tabless TO-257AA  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
JANS  
COTS  
JANS  
COTS  
Tabless TO-257AA  
JANS  
Tabless TO-257AA  
COTS  
Tabless TO-257AA  
COTS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 15  
www.infineon.com/irhirel  
2022-08-23  
 
 
 
 

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