Datasheet > IRHYB9A7034CM

IRHYB9A7034CM

更新时间： 2024-11-21 14:54:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1119K
描述
Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 100 krad(Si) TID, COTS

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IRHYB9A7034CM 数据手册

PD-97962A

IRHYB9A7034CM

JANSR2N7647D5

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

Tabless (Low-Ohmic TO-257AA)

REF: MIL-PRF-19500/775

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7647D5

JANSF2N7647D5

IRHYB9A7034CM 100 kRads (Si)

IRHYB9A3034CM 300 kRads (Si)

30A*

19m

Low-Ohmic

TO-257AA Tabless

Description

Features



Low RDS(on)

IR HiRel R9 technology provides superior power MOSFETs

for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been

characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

low RDS(on) and faster switching times reduces the power

losses and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Light Weight

ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

I_D1@ V_GS= 12V, T_C= 25°C

Continuous Drain Current

30*

I_D2@ V_GS= 12V, T_C= 100°C

I_DM@ T_C= 25°C

Continuous Drain Current

Pulsed Drain Current 

120

P_D@ T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.6

± 20

784

V_GS

E_AS

I_AR

E_AR

dv/dt

T_J

7.5

9.5

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-55 to + 150

T_STG

°C

300 (0.063 in./1.6mm from case for 10s)

4.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2021-03-26

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHYB9A7034CM相关器件

型号	品牌	获取价格	描述	数据表
IRHYB9A7130CM	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A7234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYB9A93034CM	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A93130CM	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
IRHYB9A93230CM	INFINEON	获取价格	Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tables
IRHYB9A97034CM	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A97130CM	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
IRHYB9A97230CM	INFINEON	获取价格	Rad hard, -200V, -14A, single, P-channel MOSFET, R9 in a Tabless TO-257AA package - Tables
IRHYK57133CMSE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
IRHYK57133CMSEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 130V, 0.082ohm, 1-Element, N-Channel, Silicon, Me

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