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IRHNA7160 PDF预览

IRHNA7160

更新时间： 2024-11-19 22:33:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 138K
描述
TRANSISTOR N-CHANNEL

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中文翻译

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IRHNA7160 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：SMD-2, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：500 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：51 A
最大漏极电流 (ID)：51 A最大漏源导通电阻：0.045 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：300 W最大脉冲漏极电流 (IDM)：204 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHNA7160 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1396  
IRHNA7160  
IRHNA8160  
N-CHANNEL  
MEGA RAD HARD  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
Product Summary  
100Volt, 0.045Ω, MEGA RAD HARD HEXFET  
Part Number  
IRHNA7160  
IRHNA8160  
BVDSS  
100V  
RDS(on)  
0.045Ω  
0.045Ω  
ID  
International Rectifier’s RAD HARD technology  
HEXFETs demonstrate virtual immunity to SEE fail-  
ure.Additionally, under identical pre- and post-radia-  
tion test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-  
tion within a few microseconds.Since the RAD HARD  
process utilizes International Rectifier’s patented  
HEXFET technology, the user can expect the highest  
quality and reliability in the industry.  
51A  
51A  
100V  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 106 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as  
voltage control, very fast switching, ease of paralleling  
and temperature stability of the electrical parameters.  
They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high-energy pulse circuits  
in space and weapons environments.  
Lightweight  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
IRHNA7160, IRHNA8160  
Units  
I
@ V  
= 12V, T = 25°C Continuous Drain Current  
51  
32.5  
204  
D
GS  
C
A
I
D
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
GS  
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
DM  
@ T = 25°C  
P
D
300  
W
W/K ꢀ  
V
C
2.0  
V
±20  
GS  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current   
500  
mJ  
AS  
I
51  
A
AR  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
30  
mJ  
AR  
dv/dt  
5.5  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
(for 5 sec.)  
Package Mounting Surface Temperature  
Weight  
300  
3.3 (typical)  
To Order  
 
 
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IRHNA7264SEPBF INFINEON

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IRHNA7360SE INFINEON

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IRHNA7360SEPBF INFINEON

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 		Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7360SESCS INFINEON

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 		Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met

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