Datasheet > IRG8P60N120KDPBF_15

IRG8P60N120KDPBF_15

更新时间： 2024-09-14 01:18:11

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
11页	684K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRG8P60N120KDPBF_15 数据手册

浏览型号IRG8P60N120KDPBF_15的Datasheet PDF文件第2页

浏览型号IRG8P60N120KDPBF_15的Datasheet PDF文件第3页

浏览型号IRG8P60N120KDPBF_15的Datasheet PDF文件第4页

浏览型号IRG8P60N120KDPBF_15的Datasheet PDF文件第5页

浏览型号IRG8P60N120KDPBF_15的Datasheet PDF文件第6页

IRG8P60N120KDPbF

IRG8P60N120KD-EPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V_CES= 1200V

I_C= 60A, T_C=100°C

t_SC10µs, T_J(max)= 150°C

_CE(ON)typ. = 1.7V @ IC = 40A

IRG8P60N120KDPbF

IRG8P60N120KD‐EPbF

TO‐247AD

n-channel

TO‐247AC

Applications

• Industrial Motor Drive

• UPS

• Solar Inverters

• Welding

Gate

Collector

Emitter

Features

Benefits

High Efficiency in a Motor Drive Applications

Benchmark Low V_CE(ON)

10μs Short Circuit SOA

Increases margin for short circuit protection scheme

Excellent Current Sharing in Parallel Operation

Rugged Transient Performance

Positive V_CE(ON)Temperature Coefficient

Square RBSOA and high I_LM-rating

Lead-Free, RoHS compliant

Environmentally friendly

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRG8P60N120KDPbF

TO-247AC

TO-247AD

Tube

IRG8P60N120KDPbF

IRG8P60N120KD-EPbF

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Continuous Collector Current (Silicon Limited)

Continuous Collector Current

Max.

Units

V_CES

1200

100

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Pulse Collector Current (see fig. 2)

120

I_LM

Clamped Inductive Load Current (see fig. 3)

160

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FM

V_GE

Diode Continuous Forward Current

Diode Maximum Forward Current 

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

160

±30

420

P_D@ T_C= 25°C

P_D@ T_C= 100°C

Maximum Power Dissipation

170

T_J

Operating Junction and

-40 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

Max.

0.3

0.8

–––

Units

Thermal Resistance Junction-to-Case (IGBT) 

Thermal Resistance Junction-to-Case (Diode) 

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

R_JC(IGBT)

R_JC(Diode)

R_CS

°C/W

R_JA

www.irf.com

Submit Datasheet Feedback

October 30, 2014

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRG8P60N120KDPBF_15相关器件

型号	品牌	获取价格	描述	数据表
IRGAC30F	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 23A I(C) \| TO-204AE
IRGAC30U	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 17A I(C) \| TO-204AE
IRGAC40F	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 38A I(C) \| TO-204AE
IRGAC40U	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 31A I(C) \| TO-204AE
IRGAC50F	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 45A I(C) \| TO-204AE
IRGAC50U	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 41A I(C) \| TO-204AE
IRGB10B60KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB10B60KDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB14C40L	INFINEON	获取价格	IGBT with on-chip Gate-Emitter and Gate-Collector clamps
IRGB14C40LPBF	INFINEON	获取价格	IGBT with on-chip Gate-Emitter and Gate-Collector clamps

与IRG8P60N120KDPBF_15相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

78
AIC1781A 电池充电控制器深度解析
2024-09-03

69
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

100
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

114

产品中心

服务支持

精选活动

关于我们

帮助中心

IRG8P60N120KDPBF_15

IRG8P60N120KDPBF_15 数据手册

与IRG8P60N120KDPBF_15相关器件

与IRG8P60N120KDPBF_15相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRG8P60N120KDPBF_15

IRG8P60N120KDPBF_15 数据手册

与IRG8P60N120KDPBF_15相关器件

与IRG8P60N120KDPBF_15相关文章

您还可以找

您在本页遇到什么问题？