Datasheet > IRGB4065PBF

IRGB4065PBF

更新时间： 2024-09-15 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管双极性晶体管
页数	文件大小	规格书
9页	786K
描述
PDP TRENCH IGBT

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IRGB4065PBF 数据手册

PD - 97059B

IRGB4065PbF

IRGS4065PbF

PDP TRENCH IGBT

Features

Advanced Trench IGBT Technology

Key Parameters

Optimized for Sustain and Energy Recovery

circuits in PDP applications

Low V_CE(on)and Energy per Pulse (E_PULSE

for improved panel efficiency

High repetitive peak current capability

Lead Free package

V_CEmin

300

V_CE(ON)typ. @ I_C= 70A

I_RPmax @ T_C= 25°C c

T_Jmax

1.75

)

205

150

°C

TO-220

D²Pak

IRGS4065DPbF

IRGB4065DPbF

n-channel

Gate

Collector

Emitter

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced

trenchIGBTtechnologytoachievelowV_CE(on)andlowE_PULSE^TMratingpersiliconareawhichimprovepanel

efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current

capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP

applications.

Absolute Maximum Ratings

Max.

Parameter

Units

V_GE

±30

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_RP@ T_C= 25°C

P_D@T_C= 25°C

P_D@T_C= 100°C

Continuous Collector Current, V_GE@ 15V

Continuous Collector, V_GE@ 15V

Repetitive Peak Current

205

178

Power Dissipation

1.4

Linear Derating Factor

W/°C

°C

T_J

-40 to + 150

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

–––

0.50

–––

0.70

–––

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D²Pak

°C/W

www.irf.com

09/05/06

12 3 4 5 6 7...9

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