Datasheet > IRGB4060DPBF

IRGB4060DPBF

更新时间： 2024-11-01 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	291K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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数据手册
替代型号

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IRGB4060DPBF 数据手册

PD - 97073B

IRGB4060DPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

V_CES= 600V

Features

I_C= 8.0A, T_C= 100°C

t_sc> 5µs, T_jmax= 175°C

V_{CE(on) typ.}= 1.55V

• Low V_{CE (on)}Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175 °C

• 5µs SCSOA

• Square RBSOA

n-channel

• 100% of The Parts Tested for 4X Rated Current (I_LM

• Positive V_{CE (on)}Temperature Coefficient.

• Ultra Fast Soft Recovery Co-pak Diode

• Tighter Distribution of Parameters

• Lead-Free Package

)

Benefits

• High Efficiency in a Wide Range of Applications

• Suitable for a Wide Range of Switching Frequencies due

to Low V_{CE (ON)}and Low Switching Losses

• Rugged Transient Performance for Increased Reliability

• Excellent Current Sharing in Parallel Operation

• Low EMI

TO-220AB

Gate

Collector

Emitter

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Clamped Inductive Load Current c

I_LM

I_F@T_C=25°C

I_F@T_C=100°C

I_FM

Diode Continuous Forward Current

Diode Maximum Forward Current d

± 20

± 30

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

V_GE

P_D@ T_C=25°

P_D@ T_C=100°

T_J

°C

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Junction-to-Case - IGBT e

Junction-to-Case - Diode e

Min.

Typ.

Max.

1.51

3.66

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, flat, greased surface

0.5

Junction-to-Ambient, typical socket mount e

Weight

1.44

www.irf.com

9/22/06

12 3 4 5 6 7...10

中文翻译

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IRGB4060DPBF 替代型号

型号	品牌	替代类型	描述	数据表
IKP10N60T	INFINEON	类似代替	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-p

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