是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 16 weeks | 风险等级: | 0.96 |
最大集电极电流 (IC): | 32 A | 集电极-发射极最大电压: | 600 V |
门极发射器阈值电压最大值: | 6.5 V | 门极-发射极最大电压: | 20 V |
最高工作温度: | 175 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 140 W |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGB4630DPBF | INFINEON |
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Insulated Gate Bipolar Transistor, | |
IRGB4B60K | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRGB4B60KD1 | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGB4B60KD1PBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGB4B60KD1TRL | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 | |
IRGB4B60KD1TRR | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 | |
IRGB4B60KPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRGB5B120KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGB5B120KDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGB6B60K | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR |