IRGB5B120KDPBF

更新时间： 2024-11-05 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
13页	279K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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数据手册

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IRGB5B120KDPBF 数据手册

PD - 95617

IRGB5B120KDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

V_CES= 1200V

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF.

I_C= 6.0A, T_C=100°C

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

• TO-220 Package.

t_sc> 10µs, T_J=150°C

V_CE(on)typ. = 2.75V

• Lead-Free

n-channel

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

1200

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

6.0

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FM

6.0

± 20

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

Max.

1.4

Units

R_θJC

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

R_θJC

–––

2.8

°C/W

R_θCS

0.50

–––

R_θJA

–––

2 (0.07)

–––

g (oz)

www.irf.com

8/2/04

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