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IRGB6B60K PDF预览

IRGB6B60K

更新时间: 2024-11-04 22:20:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
13页 246K
描述
INSULATED GATE BIPOLAR TRANSISTOR

IRGB6B60K 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.6
外壳连接:COLLECTOR最大集电极电流 (IC):13 A
集电极-发射极最大电压:600 V配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):258 ns标称接通时间 (ton):45 ns
Base Number Matches:1

IRGB6B60K 数据手册

 浏览型号IRGB6B60K的Datasheet PDF文件第2页浏览型号IRGB6B60K的Datasheet PDF文件第3页浏览型号IRGB6B60K的Datasheet PDF文件第4页浏览型号IRGB6B60K的Datasheet PDF文件第5页浏览型号IRGB6B60K的Datasheet PDF文件第6页浏览型号IRGB6B60K的Datasheet PDF文件第7页 
PD - 94575A  
IRGB6B60K  
IRGS6B60K  
IRGSL6B60K  
INSULATED GATE BIPOLAR TRANSISTOR  
C
VCES = 600V  
Features  
• Low VCE (on) Non Punch Through IGBT Technology.  
• 10µs Short Circuit Capability.  
• Square RBSOA.  
IC = 7.0A, TC=100°C  
tsc > 10µs, TJ=150°C  
VCE(on) typ. = 1.8V  
• Positive VCE (on) Temperature Coefficient.  
G
E
n-channel  
Benefits  
• Benchmark Efficiency for Motor Control.  
• Rugged Transient Performance.  
• Low EMI.  
• Excellent Current Sharing in Parallel Operation.  
D2Pak  
IRGS6B60K  
TO-262  
IRGSL6B60K  
TO-220AB  
IRGB6B60K  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current  
600  
V
A
IC @ TC = 25°C  
13  
IC @ TC = 100°C  
7.0  
ICM  
26  
ILM  
Clamped Inductive Load Current   
Gate-to-Emitter Voltage  
26  
± 20  
VGE  
V
PD @ TC = 25°C  
Maximum Power Dissipation  
90  
W
PD @ TC = 100°C Maximum Power Dissipation  
36  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
°C  
300 (0.063 in. (1.6mm) from case)  
Thermal Resistance  
Parameter  
Junction-to-Case - IGBT  
Min.  
–––  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
1.4  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Wt  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount‚  
Junction-to-Ambient (PCB Mount, steady state)ƒ  
Weight  
0.50  
–––  
–––  
62  
°C/W  
–––  
40  
1.44  
–––  
g
www.irf.com  
1
8/18/04  

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