Datasheet > IRGB4086PBF

IRGB4086PBF

更新时间： 2024-11-05 05:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管双极性晶体管
页数	文件大小	规格书
9页	318K
描述
PDD TRENCH IGBT

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中文翻译

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IRGB4086PBF 数据手册

PD - 96222

IRGB4086PbF

PDP TRENCH IGBT

IRGS4086PbF

Key Parameters

Features

V_CEmin

300

1.90

250

150

Advanced Trench IGBT Technology

V_CE(ON)typ. @ I_C= 70A

I_RPmax @ T_C= 25°C

T_Jmax

Optimized for Sustain and Energy Recovery

Circuits in PDP Applications

Low V_CE(on)and Energy per Pulse (E_PULSE

for Improved Panel Efficiency

)

°C

High Repetitive Peak Current Capability

Lead Free Package

D²Pak

TO-220AB

IRGB4086PbF IRGS4086PbF

n-channel

Gate

Collector

Emitter

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced

trenchIGBTtechnologytoachievelowV_CE(on)andlowE_PULSE^TMratingpersiliconareawhichimprovepanel

efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current

capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP

applications.

Absolute Maximum Ratings

Max.

Parameter

Units

V_GE

±30

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

Continuous Collector Current, V_GE@ 15V

Continuous Collector, V_GE@ 15V

Repetitive Peak Current

250

I_RP@ T_C= 25°C

P_D@T_C= 25°C

P_D@T_C= 100°C

160

Power Dissipation

1.3

Linear Derating Factor

W/°C

°C

T_J

-40 to + 150

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

0.24

–––

Max.

0.8

–––

Units

°C/W

g (oz)

R_θJC(IGBT)

Thermal Resistance Junction-to-Case-(each IGBT)

Case-to-Sink (flat, greased surface)

Junction-to-Ambient (typical socket mount)

Weight

R_θ

6.0 (0.21)

–––

www.irf.com

02/02/09

12 3 4 5 6 7...9

中文翻译

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