Datasheet > IRGB4086PBF

IRGB4086PBF

更新时间： 2025-09-18 05:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管双极性晶体管
页数	文件大小	规格书
9页	318K
描述
PDD TRENCH IGBT

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IRGB4086PBF 数据手册

IRGB/S4086PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Conditions

V_GE= 0V, I_CE= 1 mA

Parameter

Collector-to-Emitter Breakdown Voltag 300

Min. Typ. Max. Units

BV_CES

–––

Reference to 25°C, I_CE= 1mA

V_GE= 15V, I_CE= 25A

/ T

∆

∆Β

Breakdown Voltage Temp. Coefficient –––

0.29

V/°C

CES

–––

1.29 1.55

1.49 1.67

1.90 2.10

2.57 2.96

V_GE= 15V, I_CE= 40A

V_CE(on)

V_GE= 15V, I_CE= 70A

Static Collector-to-Emitter Voltage

–––

2.6

V_GE= 15V, I_CE= 120A

V_GE= 15V, I_CE= 70A, T_J= 150°C

V_CE= V_GE, I_CE= 500µA

2.27

–––

-11

2.0

5.0

100

–––

5.0

V_GE(th)

Gate Threshold Voltage

/ T

∆

Gate Threshold Voltage Coefficient

–––

––– mV/°C

GE(th)

V_CE= 300V, V_GE= 0V

I_CES

Collector-to-Emitter Leakage Current –––

–––

100

-100

–––

—

µA

V_CE= 300V, V_GE= 0V, T_J= 100°C

V_CE= 300V, V_GE= 0V, T_J= 150°C

V_GE= 30V

–––

I_GES

Gate-to-Emitter Forward Leakage

Gate-to-Emitter Reverse Leakage

Forward Transconductance

Total Gate Charge

Gate-to-Collector Charge

Turn-On delay time

Rise time

–––

—

_GE= -30V

_CE= 25V, I_CE= 25A

_CE= 200V, I_C= 25A, V_GE= 15V

g_fe

Q_g

Q_gc

t_d(on)

t_r

I_C= 25A, V_CC= 196V

R = 10 , L=200µH, L = 200nH

Ω

—

t_d(off)

t_f

t_d(on)

t_r

t_d(off)

t_f

T_J= 25°C

Turn-Off delay time

Fall time

—

112

—

I_C= 25A, V_CC= 196V

Turn-On delay time

Rise time

—

R = 10 , L=200µH, L = 200nH

Ω

—

T_J= 150°C

Turn-Off delay time

Fall time

—

145

—

t_st

V_CC= 240V, V_GE= 15V, R_G= 5.1Ω

L = 220nH, C= 0.40µF, V_GE= 15V

V_CC= 240V, R_G= 5.1Ω, T_J= 25°C

L = 220nH, C= 0.40µF, V_GE= 15V

V_CC= 240V, R_G= 5.1Ω, T_J= 100°C

V_GE= 0V

Shoot Through Blocking Time

100

–––

µJ

––– 1075 –––

E_PULSE

Energy per Pulse

––– 1432 –––

––– 2250 –––

C_iss

C_oss

C_rss

L_C

Input Capacitance

V_CE= 30V

Output Capacitance

–––

110

–––

ƒ = 1.0MHz,

See Fig.13

Reverse Transfer Capacitance

Internal Collector Inductance

5.0

Between lead,

nH 6mm (0.25in.)

from package

L_E

Internal Emitter Inductance

–––

and center of die contact

Notes:

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Half sine wave with duty cycle = 0.1, ton=2µsec.

When mounted on 1" square PCB (FR-4 or G-10 Material).

For recomended footprint and soldering techniques refer

to application note #AN-994.

R is measured at T_Jof approximately 90°C.

www.irf.com

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