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IRGB430UD2

更新时间： 2024-11-05 22:08:27

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英飞凌 - INFINEON		晶体二极管晶体管功率控制双极性晶体管栅局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
8页	389K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A)

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PD - 9.1067

IRGB430UD2

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY DIODE

UltraFast CoPack IGBT

Features

V_CES= 500V

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for high operating frequency (over 5kHz)

See Fig. 1 for Current vs. Frequency curve

_CE(sat)≤ 3.0V

@V_GE= 15V, I_C= 15A

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, motor control, UPS and power supply applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

500

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

I_FM

V_GE

± 20

P_D@ T_C= 25°C

Maximum Power Dissipation

100

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

—

Typ.

——

—

Max.

1.2

2.5

—

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

—

°C/W

—

0.50

—

2 (0.07)

—

g (oz)

Revision 1

C-625

To Order

12 3 4 5 6 7 8

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