Datasheet > 晶体管 > IGBT> IRGB4B60KD1TRR

IRGB4B60KD1TRR

更新时间： 2024-11-05 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
15页	377K
描述
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRGB4B60KD1TRR 数据手册

PD - 94607A

IRGB4B60KD1

IRGS4B60KD1

IRGSL4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

V_CES= 600V

Features

• Low VCE (on) Non Punch Through IGBT Technology.

I_C= 7.6A, T_C=100°C

t_sc> 10µs, T_J=150°C

V_CE(on)typ. = 2.1V

• 10µs Short Circuit Capability.

• Square RBSOA.

• Positive VCE (on) Temperature Coefficient.

• Maximum Junction Temperature rated at 175°C.

n-channel

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

D²Pak

TO-262

TO-220

IRGS4B60KD1 IRGSL4B60KD1

IRGB4B60KD1

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Voltage

600

V_CES

I_C@ T_C= 25°C

Continuous Collector Current

Pulse Collector Current (Ref.Fig.C.T.5)

Clamped Inductive Load current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

7.6

I_C@ T_C= 100°C

I_CM

I_LM

I_F@ T_C= 25°C

6.7

I_F@ T_C= 100°C

I_FM

±20

V_GE

P_D@ T_C= 25°C Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and

P_D@ T_C= 100°C

T_J

-55 to +175

Storage Temperature Range

Storage Temperature Range, for 10 sec.

°C

T_STG

300 (0.063 in. (1.6mm) from case)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

Max.

2.4

Units

Junction-to-Case- IGBT

°C/W

R_θ

R_θJC

Junction-to-Case- Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient

–––

6.1

0.50

–––

R_θ

R_θJA

–––

R_θ

Junction-to-Ambient (PCB Mount, steady state)

Weight

1.44

–––

www.irf.com

05/28/03

12 3 4 5 6 7...15

中文翻译

下载PDF

与IRGB4B60KD1TRR相关器件

型号	品牌	获取价格	描述	数据表
IRGB4B60KPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRGB5B120KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB5B120KDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB6B60K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRGB6B60KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB6B60KDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB6B60KPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRGB8B60K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRGB8B60KPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRGBC20	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)