Datasheet > 晶体管 > IGBT> IRGB420U

IRGB420U

更新时间： 2024-11-04 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制双极性晶体管栅局域网
页数	文件大小	规格书
6页	224K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRGB420U 数据手册

Previous Datasheet

Index

Next Data Sheet

PD - 9.784A

IRGB420U

INSULATED GATE BIPOLAR TRANSISTOR

UltraFast IGBT

Features

• Switching-loss rating includes all "tail" losses

• Optimized for high operating frequency (over 5kHz)

See Fig. 1 for Current vs. Frequency curve

V_CES= 500V

_CE(sat)≤ 3.0V

@V_GE= 15V, I_C= 7.5A

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

500

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

7.5

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

V_GE

±20

5.0

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

—

Typ.

—

Max.

2.1

—

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

—

0.50

—

2.0 (0.07)

—

g (oz)

Revision 0

C-575

To Order

12 3 4 5 6

中文翻译

下载PDF

与IRGB420U相关器件

型号	品牌	获取价格	描述	数据表
IRGB420UD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V,Ic=7.5A
IRGB430	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)
IRGB430U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)
IRGB430UD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V,
IRGB440U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)
IRGB4620DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel,
IRGB4630DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGB4B60K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4B60KD1	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4B60KD1PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE