Datasheet > IRGB4086PBF

IRGB4086PBF

更新时间： 2025-09-18 05:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管双极性晶体管
页数	文件大小	规格书
9页	318K
描述
PDD TRENCH IGBT

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中文翻译

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数据手册

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IRGB4086PBF 数据手册

IRGB/S4086PbF

10000

1000

100

I = 25A

= 240V

= 200V

= 150V

Cies

Coes

Cres

100

200

300

Total Gate Charge (nC)

(V)

Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage

Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage

D = 0.50

0.20

0.1

0.10

0.05

R₁

R₂

R₃

τι

(sec)

Ri (°C/W)

^Jτ_J

^Cτ

0.084697 0.000038

0.374206 0.001255

0.341867 0.013676

0.02

0.01

¹τ₁

²τ₂

³τ₃

Ci= τi/Ri

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)

www.irf.com

1 2 3 456 7 8 9

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