Datasheet > IRGB4B60KD1TRL

IRGB4B60KD1TRL

更新时间： 2024-09-15 21:13:03

品牌	Logo	应用领域
英飞凌 - INFINEON		超快软恢复二极管快速软恢复二极管局域网电动机控制栅晶体管
页数	文件大小	规格书
16页	380K
描述
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

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IRGB4B60KD1TRL 数据手册

PD - 94607A

IRGB4B60KD1

IRGS4B60KD1

IRGSL4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

V_CES= 600V

Features

• Low VCE (on) Non Punch Through IGBT Technology.

I_C= 7.6A, T_C=100°C

t_sc> 10µs, T_J=150°C

V_CE(on)typ. = 2.1V

• 10µs Short Circuit Capability.

• Square RBSOA.

• Positive VCE (on) Temperature Coefficient.

• Maximum Junction Temperature rated at 175°C.

n-channel

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

D²Pak

TO-262

TO-220

IRGS4B60KD1 IRGSL4B60KD1

IRGB4B60KD1

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Voltage

600

V_CES

I_C@ T_C= 25°C

Continuous Collector Current

Pulse Collector Current (Ref.Fig.C.T.5)

Clamped Inductive Load current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

7.6

I_C@ T_C= 100°C

I_CM

I_LM

I_F@ T_C= 25°C

6.7

I_F@ T_C= 100°C

I_FM

±20

V_GE

P_D@ T_C= 25°C Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and

P_D@ T_C= 100°C

T_J

-55 to +175

Storage Temperature Range

Storage Temperature Range, for 10 sec.

°C

T_STG

300 (0.063 in. (1.6mm) from case)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

Max.

2.4

Units

Junction-to-Case- IGBT

°C/W

R_θ

R_θJC

Junction-to-Case- Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient

–––

6.1

0.50

–––

R_θ

R_θJA

–––

R_θ

Junction-to-Ambient (PCB Mount, steady state)

Weight

1.44

–––

www.irf.com

05/28/03

12 3 4 5 6 7...16

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