Datasheet > IRGB4086PBF

IRGB4086PBF

更新时间： 2025-09-18 05:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管双极性晶体管
页数	文件大小	规格书
9页	318K
描述
PDD TRENCH IGBT

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中文翻译

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数据手册

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IRGB4086PBF 数据手册

IRGB/S4086PbF

300

200

100

ton= 2µs

Duty cycle = 0.1

Half Sine Wave

100

125

150

100

125

150

Case Temperature (°C)

, Case Temperature (°C)

Fig 8. Typical Repetitive Peak Current vs. Case Temperature

Fig 7. Maximum Collector Current vs. Case Temperature

1600

1500

L = 220nH

C = 0.4µF

= 240V

1400

1300

1200

1100

1000

900

1400

1200

1000

800

L = 220nH

C = variable

100°C

25°C

800

25°C

600

700

600

400

500

200

400

150 160 170 180 190 200 210 220 230 240

Collector-to-Emitter Voltage (V)

160 170 180 190 200 210 220 230

I , Peak Collector Current (A)

CE,

Fig 9. Typical E_PULSEvs. Collector Current

Fig 10. Typical E_PULSEvs. Collector-to-Emitter Voltage

2000

1000

= 240V

L = 220nH

t = 1µs half sine

C= 0.4µF

1600

1200

800

400

100

10 µs

100 µs

C= 0.3µF

C= 0.2µF

125

1ms

100

1000

100

150

(V)

T , Temperature (ºC)

Fig 11. E_PULSEvs. Temperature

Fig 12. Forward Bias Safe Operating Area

www.irf.com

1 2 345 6 7...9

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