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IRGB4055PBF PDF预览

IRGB4055PBF

更新时间: 2024-11-01 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
7页 621K
描述
Advanced Trench IGBT Technology

IRGB4055PBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):110 A
集电极-发射极最大电压:300 V门极发射器阈值电压最大值:5 V
门极-发射极最大电压:30 V最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):255 W
子类别:Insulated Gate BIP Transistors表面贴装:NO
Base Number Matches:1

IRGB4055PBF 数据手册

 浏览型号IRGB4055PBF的Datasheet PDF文件第2页浏览型号IRGB4055PBF的Datasheet PDF文件第3页浏览型号IRGB4055PBF的Datasheet PDF文件第4页浏览型号IRGB4055PBF的Datasheet PDF文件第5页浏览型号IRGB4055PBF的Datasheet PDF文件第6页浏览型号IRGB4055PBF的Datasheet PDF文件第7页 
PD - 97058  
IRGB4055PbF  
Key Parameters  
PDP TRENCH IGBT  
Features  
VCE min  
300  
V
l
Advanced Trench IGBT Technology  
VCE(ON) typ. @ 110A  
1.70  
V
l
Optimized for Sustain and Energy Recovery  
circuits in PDP applications  
Low VCE(on) and Energy per Pulse (EPULSE  
for improved panel efficiency  
I
RP max @ TC= 25°C c  
270  
150  
A
°C  
TM  
l
)
TJ max  
l
l
High repetitive peak current capability  
Lead Free package  
C
G
E
TO-220AB  
n-channel  
Description  
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes  
advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area  
which improve panel efficiency. Additional features are 150°C operating junction temperature and high  
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust  
and reliable device for PDP applications.  
Absolute Maximum Ratings  
Max.  
±30  
Parameter  
Gate-to-Emitter Voltage  
Units  
V
VGE  
IC @ TC = 25°C  
IC @ TC = 100°C  
IRP @ TC = 25°C  
PD @TC = 25°C  
PD @TC = 100°C  
Continuous Collector Current, VGE @ 15V  
Continuous Collector, VGE @ 15V  
110  
A
60  
270  
c
Repetitive Peak Current  
Power Dissipation  
255  
W
102  
Power Dissipation  
2.04  
Linear Derating Factor  
Operating Junction and  
W/°C  
°C  
TJ  
-40 to + 150  
TSTG  
Storage Temperature Range  
300  
Soldering Temperature for 10 seconds  
Mounting Torque, 6-32 or M3 Screw  
x
x
10lb in (1.1N m)  
N
Thermal Resistance  
Parameter  
d
Typ.  
–––  
Max.  
0.49  
Units  
°C/W  
Rθ  
Junction-to-Case  
JC  
www.irf.com  
1
10/13/05  

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