是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
Is Samacsys: | N | 最大集电极电流 (IC): | 110 A |
集电极-发射极最大电压: | 300 V | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 30 V | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 255 W |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGB4056DPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGB4059DPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR | |
IRGB4060DPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGB4061DPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGB4062DPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGB4064DPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR | |
IRGB4065PBF | INFINEON |
获取价格 |
PDP TRENCH IGBT | |
IRGB4086PBF | INFINEON |
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PDD TRENCH IGBT | |
IRGB410U | INFINEON |
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Insulated Gate Bipolar Transistor, 500V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | |
IRGB420 | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A) |