Datasheet > IRGB30B60KPBF

IRGB30B60KPBF

更新时间： 2024-11-05 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
13页	323K
描述
INSULATED GATE BIPOLAR TRANSISTOR

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中文翻译

获取价格

数据手册
替代型号

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IRGB30B60KPBF 数据手册

PD - 95356

IRGB30B60KPbF

IRGS30B60K

IRGSL30B60K

V_CES= 600V

INSULATED GATE BIPOLAR TRANSISTOR

Features

I_C= 50A, T_C=100°C

at T_J=175°C

• Low VCE (on) Non Punch Through IGBT Technology.

• 10µs Short Circuit Capability.

• Square RBSOA.

t_sc> 10µs, T_J=150°C

V_CE(on)typ. = 1.95V

• Positive VCE (on) Temperature Coefficient.

• Maximum Junction Temperature rated at 175°C.

• TO-220 is available in PbF as Lead-Free

n-channel

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

D²Pak

IRGS30B60K

TO-262

IRGSL30B60K

TO-220AB

IRGB30B60KPbF

Absolute Maximum Ratings

Parameter

Max.

600

Units

Collector-to-Emitter Voltage

V_CES

Continuous Collector Current

Pulse Collector Current (Ref.Fig.C.T.5)

Clamped Inductive Load current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

120

I_CM

120

I_LM

RMS Isolation Voltage, Terminal to Case, t=1 min.

Gate-to-Emitter Voltage

2500

±20

V_ISOL

V_GE

Maximum Power Dissipation

370

P_D@ T_C= 25°C

Maximum Power Dissipation

180

P_D@ T_C= 100°C

Operating Junction and

-55 to +175

T_J

Storage Temperature Range

°C

T_STG

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

Max.

0.41

–––

Units

°C/W

Junction-to-Case- IGBT

R_θJC

Case-to-Sink, flat, greased surface

0.50

–––

R_θ

Junction-to-Ambient, typical socket mount

Junction-to-Ambient (PCB Mount, Steady State)

R_θJA

–––

R_θ

Weight

1.44

–––

www.irf.com

9/22/04

12 3 4 5 6 7...13

中文翻译

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IRGB30B60KPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRGB30B60K	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR

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