Datasheet > IRGB30B60KPBF

IRGB30B60KPBF

更新时间： 2024-11-01 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
13页	323K
描述
INSULATED GATE BIPOLAR TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRGB30B60KPBF 数据手册

PD - 95356

IRGB30B60KPbF

IRGS30B60K

IRGSL30B60K

V_CES= 600V

INSULATED GATE BIPOLAR TRANSISTOR

Features

I_C= 50A, T_C=100°C

at T_J=175°C

• Low VCE (on) Non Punch Through IGBT Technology.

• 10µs Short Circuit Capability.

• Square RBSOA.

t_sc> 10µs, T_J=150°C

V_CE(on)typ. = 1.95V

• Positive VCE (on) Temperature Coefficient.

• Maximum Junction Temperature rated at 175°C.

• TO-220 is available in PbF as Lead-Free

n-channel

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

D²Pak

IRGS30B60K

TO-262

IRGSL30B60K

TO-220AB

IRGB30B60KPbF

Absolute Maximum Ratings

Parameter

Max.

600

Units

Collector-to-Emitter Voltage

V_CES

Continuous Collector Current

Pulse Collector Current (Ref.Fig.C.T.5)

Clamped Inductive Load current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

120

I_CM

120

I_LM

RMS Isolation Voltage, Terminal to Case, t=1 min.

Gate-to-Emitter Voltage

2500

±20

V_ISOL

V_GE

Maximum Power Dissipation

370

P_D@ T_C= 25°C

Maximum Power Dissipation

180

P_D@ T_C= 100°C

Operating Junction and

-55 to +175

T_J

Storage Temperature Range

°C

T_STG

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

Max.

0.41

–––

Units

°C/W

Junction-to-Case- IGBT

R_θJC

Case-to-Sink, flat, greased surface

0.50

–––

R_θ

Junction-to-Ambient, typical socket mount

Junction-to-Ambient (PCB Mount, Steady State)

R_θJA

–––

R_θ

Weight

1.44

–––

www.irf.com

9/22/04

12 3 4 5 6 7...13

中文翻译

下载PDF

IRGB30B60KPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRGB30B60K	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR

与IRGB30B60KPBF相关器件

型号	品牌	获取价格	描述	数据表
IRGB4045DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4055PBF	INFINEON	获取价格	Advanced Trench IGBT Technology
IRGB4056DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4059DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR
IRGB4060DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4061DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4062DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4064DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR
IRGB4065PBF	INFINEON	获取价格	PDP TRENCH IGBT
IRGB4086PBF	INFINEON	获取价格	PDD TRENCH IGBT